Fabrication method of a semiconductor device and cleaning method of processing chamber in semiconductor device
The present invention relates to a method to manufacture a semiconductor device, including a process to clean a processing chamber, and a method to clean a semiconductor processing chamber. According to the present invention, the method comprises the following steps of: introducing a substrate with...
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Main Authors | , , , |
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Format | Patent |
Language | English Korean |
Published |
28.04.2017
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Subjects | |
Online Access | Get full text |
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Summary: | The present invention relates to a method to manufacture a semiconductor device, including a process to clean a processing chamber, and a method to clean a semiconductor processing chamber. According to the present invention, the method comprises the following steps of: introducing a substrate with a carbon-based sacrifice film pattern in a processing chamber; forming a mask substance film on the substrate; withdrawing the substrate from the processing chamber; and partially removing the carbon-based substance film formed inside the processing chamber. Thus, since processing quality is improved in future, a yield rate of the semiconductor device is increased.
본 발명은 반도체 공정에서 사용되는 공정 챔버(Chamber)를 세정하는 과정이 포함된 반도체 장치의 제조방법과 반도체 공정 공정 챔버의 세정방법에 관한 것으로서, 탄소계 희생막 패턴을 갖는 기판을 공정 챔버에 도입하는 단계;상기 기판에 마스크 물질막을 형성하는 단계;상기 기판을 상기 공정 챔버에서 반출하는 단계; 및 상기 공정 챔버 내부에 형성된 탄소계 물질막을 적어도 부분적으로 제거하는 단계를 포함하는 반도체 장치의 제조방법을 이용하면 향후 공정 품질이 향상되어 반도체 수율이 향상되는 효과가 있다. |
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Bibliography: | Application Number: KR20150146096 |