CMOS-MEMS STRUCTURE AND METHOD OF FORMING THE SAME

The present disclosure provides a CMOS structure, including a substrate, a metallization layer over the substrate, a sensing structure over the metallization layer, and a signal transmitting structure adjacent to the sensing structure. The sensing structure includes an outgassing layer over the meta...

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Bibliographic Details
Main Authors PENG JUNG HUEI, CHU CHIA HUA, LAI FEI LUNG, LIN SHIANG CHI
Format Patent
LanguageEnglish
Korean
Published 25.04.2017
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES
MICROSTRUCTURAL TECHNOLOGY
PERFORMING OPERATIONS
PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
SEMICONDUCTOR DEVICES
TRANSPORTING
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Summary:The present disclosure provides a CMOS structure, including a substrate, a metallization layer over the substrate, a sensing structure over the metallization layer, and a signal transmitting structure adjacent to the sensing structure. The sensing structure includes an outgassing layer over the metallization layer, a patterned outgassing barrier over the outgassing layer, and an electrode over the patterned outgassing barrier. The signal transmitting structure electrically couples the electrode and the metallization layer. 본 개시는, 기판, 기판 위의 금속화 층, 금속화 층 위의 감지 구조물, 및 감지 구조물에 인접한 신호 전송 구조물을 포함하는 CMOS 구조물을 제공한다. 감지 구조물은, 금속화 층 위의 아웃개싱 층, 아웃개싱 층 위의 패터닝된 아웃개싱 배리어, 및 패터닝된 아웃개싱 배리어 위의 전극을 포함한다. 신호 전송 구조물은 전극과 금속화 층을 전기적으로 연결한다.
Bibliography:Application Number: KR20160005926