Composition for manufacturing semiconductor device and method of manufacturing semiconductor device using the composition

• Main Authors: KIM, HYUN WOO, PARK, JIN, KIM, MYEONG KOO
• Format: Patent
• Language: English; Korean
• Published: 06.03.2017
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Provided is a composition for manufacturing a semiconductor device which comprises: at least one carbon-based compound having at least one group of alkyne and azide; and a solvent. To manufacture the semiconductor device, a carbon containing layer including a triazole compound by treating with heat is formed after coating the composition comprising the alkyne and the azide on a feature layer, and the carbon containing layer and the feature layer are patterned. The composition for manufacturing the semiconductor device can provide excellent gap-fill properties on a lower structure having a difference and excellent planarization properties which can be obtained over a relatively large area in a manufacturing process of a highly integrated semiconductor device. 알카인 및 아자이드 중 적어도 하나의 기를 가지는 적어도 하나의 탄소 화합물과, 용매를 포함하는 반도체 소자 제조용 조성물을 제공한다. 반도체 소자를 제조하기 위하여, 피쳐층 위에 알카인 및 아자이드를 포함하는 조성물을 코팅한 후, 열처리하여 트리아졸 화합물을 포함하는 탄소 함유층을 형성하고, 탄소 함유층 및 상기 피쳐층을 패터닝한다.