Method of forming thin film and method of manufacturing integrated circuit device using the same

• Main Authors: CHANG, JAE WAN, KIM, YOUN SOO, SHIRATORI TSUBASA
• Format: Patent
• Language: English; Korean
• Published: 06.03.2017
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A precursor adsorption layer including an organic ligand is formed by supplying a precursor including the organic ligand and a central atom which is metal or silicon on a lower structure for forming a thin film. An intermediate result layer in which the organic ligand included in the precursor adsorption layer is substituted with a substituent is formed by supplying a non-oxidizing agent on the precursor adsorption layer. An oxide film including the central atom is formed from the intermediate result layer by supplying an oxidizing agent on the intermediate result layer. Accordingly, the present invention can prevent a bridge phenomenon between adjacent lower electrodes or the oxidation of the lower electrode due to an excessive oxidizing agent by using the non-oxidizing agent. 박막 형성을 위하여 하부 구조물 상에 금속 또는 실리콘인 중심 원자와, 유기 리간드(ligand)를 포함하는 전구체를 공급하여 유기 리간드를 포함하는 전구체 흡착층을 형성한다. 전구체 흡착층 상에 비산화제를 공급하여 전구체 흡착층에 포함된 유기 리간드가 치환기로 치환된 중간 결과물층을 형성한다. 중간 결과물층 상에 산화제를 공급하여 중간 결과물층으로부터 중심 원자를 포함하는 산화막을 형성한다.