ATOMIC LAYER ETCHING OF TUNGSTEN FOR ENHANCED TUNGSTEN DEPOSITION FILL
In the present specification, provided are methods for depositing tungsten into features with high aperture ratios by using a deposition-etch-deposition process integrating various deposition methods with alternating pulses of surface modification and removal for an etching process. Accordingly, the...
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Format | Patent |
Language | English Korean |
Published |
15.02.2017
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Abstract | In the present specification, provided are methods for depositing tungsten into features with high aperture ratios by using a deposition-etch-deposition process integrating various deposition methods with alternating pulses of surface modification and removal for an etching process. Accordingly, the present invention can improve reliability and performance of a semiconductor device by filing the features without a gap.
에칭 동안 표면 개질 및 제거의 교번하는 펄스들을 가진 다양한 증착 기법들을 통합한 증착-에칭-증착 (dep-etch-dep) 프로세스를 사용하여 고 종횡비 피처들 내로 텅스텐을 증착하는 방법들이 본 명세서에 제공된다. |
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AbstractList | In the present specification, provided are methods for depositing tungsten into features with high aperture ratios by using a deposition-etch-deposition process integrating various deposition methods with alternating pulses of surface modification and removal for an etching process. Accordingly, the present invention can improve reliability and performance of a semiconductor device by filing the features without a gap.
에칭 동안 표면 개질 및 제거의 교번하는 펄스들을 가진 다양한 증착 기법들을 통합한 증착-에칭-증착 (dep-etch-dep) 프로세스를 사용하여 고 종횡비 피처들 내로 텅스텐을 증착하는 방법들이 본 명세서에 제공된다. |
Author | KANARIK KEREN JACOBS WOOD MICHAEL LAI CHIUKIN STEVEN DANEK MICHAL YANG WENBING SU TEH TIEN CHANDRASHEKAR ANAND TAN SAMANTHA |
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DocumentTitleAlternate | 향상된 텅스텐 증착 충진을 위한 텅스텐의 원자층 에칭 |
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Snippet | In the present specification, provided are methods for depositing tungsten into features with high aperture ratios by using a deposition-etch-deposition... |
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SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
Title | ATOMIC LAYER ETCHING OF TUNGSTEN FOR ENHANCED TUNGSTEN DEPOSITION FILL |
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