ATOMIC LAYER ETCHING OF TUNGSTEN FOR ENHANCED TUNGSTEN DEPOSITION FILL

In the present specification, provided are methods for depositing tungsten into features with high aperture ratios by using a deposition-etch-deposition process integrating various deposition methods with alternating pulses of surface modification and removal for an etching process. Accordingly, the...

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Main Authors CHANDRASHEKAR ANAND, KANARIK KEREN JACOBS, WOOD MICHAEL, YANG WENBING, LAI CHIUKIN STEVEN, TAN SAMANTHA, SU TEH TIEN, DANEK MICHAL
Format Patent
LanguageEnglish
Korean
Published 15.02.2017
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:In the present specification, provided are methods for depositing tungsten into features with high aperture ratios by using a deposition-etch-deposition process integrating various deposition methods with alternating pulses of surface modification and removal for an etching process. Accordingly, the present invention can improve reliability and performance of a semiconductor device by filing the features without a gap. 에칭 동안 표면 개질 및 제거의 교번하는 펄스들을 가진 다양한 증착 기법들을 통합한 증착-에칭-증착 (dep-etch-dep) 프로세스를 사용하여 고 종횡비 피처들 내로 텅스텐을 증착하는 방법들이 본 명세서에 제공된다.
Bibliography:Application Number: KR20160099470