MEMORY DEVICE

A memory device includes: a plurality of word lines which are connected to one or more memory cells; a nonvolatile memory unit which stores an address of one or more word lines among the plurality of word lines; and a refresh control unit which controls the plurality of word lines to be firstly refr...

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Bibliographic Details
Main Authors KIM, KWI DONG, CHUN, JUN HYUN
Format Patent
LanguageEnglish
Korean
Published 15.02.2017
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:A memory device includes: a plurality of word lines which are connected to one or more memory cells; a nonvolatile memory unit which stores an address of one or more word lines among the plurality of word lines; and a refresh control unit which controls the plurality of word lines to be firstly refreshed in order and controls the word line corresponding to the address stored in the nonvolatile memory unit to be secondly refreshed one or more times for a refresh section, wherein the refresh section is a section to totally refresh the plurality of word lines once. Accordingly, the present invention performs a refresh operation to normally operate memory cells whose data retention time does not reach reference time. 메모리 장치는 하나 이상의 메모리 셀이 연결된 다수의 워드라인; 상기 다수의 워드라인 중 하나 이상의 워드라인의 어드레스를 저장하는 비휘발성 메모리부; 및 상기 다수의 워드라인이 차례로 제1리프레시되도록 제어하되, 비휘발성 메모리부에 저장된 어드레스에 대응하는 워드라인이 리프레시 구간 - 상기 리프레시 구간은 상기 다수의 워드라인이 1회씩 모두 리프레시 되는 구간임 - 동안 1회 이상 제2리프레시되도록 제어하는 리프레시 제어부를 포함할 수 있다.
Bibliography:Application Number: KR20150111080