SUBSTRATE PROCESSING APPARATUS SUBSTRATE PROCESSING METHOD MAINTENANCE METHOD OF SUBSTRATE PROCESSING APPARATUS AND STORAGE MEDIUM

• Main Authors: TANAKA MASATAKA, MUTA KOSHI, MORI TAKUYA, MIZUNAGA KOUICHI, TAKESHITA KAZUHIRO, KANAGAWA KOUZOU, MORIYA TSUYOSHI, ESAKI TOMONORI, NAKANO KEIGO
• Format: Patent
• Language: English; Korean
• Published: 08.02.2017
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CINEMATOGRAPHY; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; SEMICONDUCTOR DEVICES

The present invention relates to a substrate processing apparatus, a substrate processing method, a maintenance method of the substrate processing apparatus, and a storage medium. The substrate processing method can suppress, during thermal processing of a wafer, a sublimate from being attached to an exhaust passage by decomposing the sublimate caused by processing of a wafer, and can remove the sublimate attached to a light transmission window when thermally processing the wafer (W) by light from a light source unit. A thermal catalyst layer (5) is formed on an inner surface of a processing container (2), and the thermal catalyst layer (5) is heated. And thus, when a sublimate, which sublimates from a coating film on the wafer (W) and then is accommodated in the processing container (2), approaches the thermal catalyst layer (5), the sublimate is decomposed and removed by thermal activation of the thermal catalyst layer (5). Also, as to removing the sublimate attached to the light transmission window (42), a cleaning substrate (6) having the thermal catalyst layer (5) formed on a surface thereof is inserted into the processing container (2), and the thermal catalyst layer (5) gets close to the light transmission window (42), and then the cleaning substrate (6) is heated to remove the sublimate (9) attached to the surface of the light transmission window (42). [과제] 웨이퍼를 가열 처리함에 있어서, 웨이퍼의 처리에 의해 생기는 승화물을 분해하여, 승화물이 배기로에 부착되는 것을 억제하는 것. 또한, 광원부로부터의 광에 의해 웨이퍼(W)에 대하여 가열 등의 처리를 행함에 있어서, 광투과창에 부착된 승화물을 제거하는 것. [해결 수단] 처리 용기(2)의 내면에 열촉매층(5)을 형성하여, 이 열촉매층(5)을 가열하고 있다. 이 때문에 웨이퍼(W) 상의 도포막으로부터 승화하여 처리 용기(2) 내에 받아들여진 승화물이 열촉매층(5) 근방에 도달했을 때에, 열촉매층(5)의 열활성화에 의해 분해 제거된다. 또한, 광투과창(42)에 부착된 승화물을 제거함에 있어서는, 표면에 열촉매층(5)을 형성한 클리닝용 기판(6)을 처리 용기(2) 내에 반입하여, 열촉매층(5)을 광투과창(42)에 가깝게 한 후, 클리닝용 기판(6)을 가열함으로써, 광투과창(42)의 표면에 부착된 승화물(9)을 제거한다.