APPARATUS AND METHOD FOR PROCESSING SUBSTRATE

A substrate processing method according to an embodiment of the present invention comprises: a step of calculating the volume of a chamber by using a first temperature and a first pressure in the chamber, and a first mass flow of a first gas while supplying the first gas to the inside of the chamber...

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Bibliographic Details
Main Authors HYON, JUN JIN, KO, HYEONG SIK, KANG, CHUL GOO
Format Patent
LanguageEnglish
Korean
Published 18.01.2017
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A substrate processing method according to an embodiment of the present invention comprises: a step of calculating the volume of a chamber by using a first temperature and a first pressure in the chamber, and a first mass flow of a first gas while supplying the first gas to the inside of the chamber for a first duration; and a step of calculating a second temperature in the chamber with the volume of the chamber by using a second pressure and a second mass flow of a second gas in the chamber while supplying the second gas to the inside of the chamber for a second duration. Therefore, the inside temperature of the chamber can be calculated without an extra temperature measuring device. 본 발명의 일 실시예에 의하면, 기판 처리 방법은, 챔버의 내부에 제1 시간 동안 제1 가스를 공급하면서 상기 챔버 내부의 제1 온도 및 제1 압력과 상기 제1 가스의 제1 질량유량을 이용하여 상기 챔버의 챔버용량을 연산하는 단계; 그리고 상기 챔버의 내부에 제2 시간 동안 제2 가스를 공급하면서 상기 챔버 내부의 제2 압력과 상기 제2 가스의 제2 질량유량을 이용하고 상기 챔버용량과 연산하여 상기 챔버 내부의 제2 온도를 연산하는 단계를 포함한다.
Bibliography:Application Number: KR20150096978