Emissivity surface finish and porosity control of semiconductor reactor components

• Main Authors: WHITE CARL LOUIS, SHUGRUE JOHN KEVIN
• Format: Patent
• Language: English; Korean
• Published: 16.01.2017
• Subjects: APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROFORMING; ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

Provided are a device and method related to the surface of a reaction chamber assembly component. The surface may be roughened and/or anodized to provide desirable emissivity and porosity to help the reduction of the burn-in time of a reaction chamber and to help the reduction of particles inside the chamber. The device and method are suitable for thin film deposition on a semiconductor or other substrates. 반응 챔버 어셈블리 구성요소의 표면에 관계된 장치 및 방법이 제공된다. 상기 표면은 반응 챔버의 번-인 시간을 감소시키는데 도움을 주며, 상기 챔버 내에서 파티클들을 감소시키는데 도움을 주는 원하는 방사율 및 다공성을 제공하도록 거칠게 되고, 및/또는 양극 산화처리될 수 있다. 상기 장치 및 방법은 반도체 또는 다른 기판들 상에 박막 퇴적을 위해 적합할 것이다.