LIGHT-EMITTING DIODE AND METHOD FOR MANUFACTURING SAME

According to the present invention, a light emitting diode includes: a bulk substrate made of an aluminum nitride (AIN); a buffer layer formed on the bulk substrate by growing the AIN; and a light emitting structure formed on the buffer layer. An empty space is included between the bulk substrate an...

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Bibliographic Details
Main Authors CHOI, JAE HOON, KIM, BYEOUNG JO
Format Patent
LanguageEnglish
Korean
Published 26.12.2016
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:According to the present invention, a light emitting diode includes: a bulk substrate made of an aluminum nitride (AIN); a buffer layer formed on the bulk substrate by growing the AIN; and a light emitting structure formed on the buffer layer. An empty space is included between the bulk substrate and the buffer layer. 본 발명에 따른 발광 다이오드는 알루미늄질화물(AlN)로 구성된 벌크 기판, 벌크 기판 상에 상기 알루미늄질화물을 성장시켜 형성된 버퍼층, 및 버퍼층 상에 형성된 발광 구조물을 포함하고, 벌크 기판과 상기 버퍼층 사이에 빈 공간을 더 포함할 수 있다.
Bibliography:Application Number: KR20150084928