NANOCRYSTAL METHOD OF PREPARING THE SAME AND ELECTRONIC DEVICE INCLUDING THE SAME

Provided is a nano crystal which includes: a core particle comprising a first nano crystal of indium phosphide (InP); at least one layer shell comprising a second nano crystal selected from ZnS and GaP which enclose the core particle, and a combination of the ZnS and the GaP; and a passivation layer...

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Main Authors WOO, HEE JE, KONG, EUI HYUN, LEE, JUN WOO, YOUN, JIN SUOP, KWON, O BUM, PARK, ON YOU, KIM, JONG GI, CHO SUNG SEO, HAN, HYUN JOO
Format Patent
LanguageEnglish
Korean
Published 12.12.2016
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Provided is a nano crystal which includes: a core particle comprising a first nano crystal of indium phosphide (InP); at least one layer shell comprising a second nano crystal selected from ZnS and GaP which enclose the core particle, and a combination of the ZnS and the GaP; and a passivation layer comprising Indium oxide (In_2O_3) externally formed in the outermost side of the shell. 인듐 포스파이드(InP)의 제1 나노결정으로 이루어진 코어 입자; 상기 코어 입자를 둘러싸는 ZnS, GaP 및 이들의 조합으로부터 선택된 제2 나노결정으로 이루어진 적어도 1층의 쉘; 및 상기 쉘의 최외각에 외치하는 인듐 옥사이드(InO)로 이루어진 패시베이션 층을 포함하는 나노결정을 제공한다.
Bibliography:Application Number: KR20150078225