Organic light emitting diode and method of fabricating the same

The present invention: forms a hole transfer layer and a buffer layer on a hole injection layer by means of a solution process; and proceeds with a sintering process for the hole injection layer, thereby preventing the hole injection layer from being deteriorated due to the sintering process in a hy...

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Main Authors CHOI, JEONG MOOK, YOUN, JUN HO, LEE, SANG BIN, JO, YUN JOO, HWANG, HYE MIN, KIM, JUN YOUNG, JUNG, NACK YOUN, YUN, HUI KUN, JOO, MYUNG O
Format Patent
LanguageEnglish
Korean
Published 08.12.2016
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The present invention: forms a hole transfer layer and a buffer layer on a hole injection layer by means of a solution process; and proceeds with a sintering process for the hole injection layer, thereby preventing the hole injection layer from being deteriorated due to the sintering process in a hybrid structure organic light emitting diode. 본 발명은, 정공 주입층 상에 용액 공정에 의해 정공 수송층과 버퍼층을 형성하고 정공 주입층에 대하여 소성 공정을 진행함으로써, 하이브리드 구조 유기발광다이오드에서 정공 주입층이 소성 공정에 의해 열화되는 것을 방지할 수 있다.
Bibliography:Application Number: KR20150076359