CVD DEPOSITION OF LOW FLUORINE TUNGSTEN BY SEQUENTIAL CVD PROCESS

• Main Authors: GOPINATH SANJAY, HUMAYUN RAASHINA, ASHTIANI KAIHAN ABIDI, THOMBARE SHRUTI VIVEK, BA XIAOLAN, DANEK MICHAL, YU TIANHUA, JANDL ADAM, SCHLOSS LAWRENCE
• Format: Patent
• Language: English; Korean
• Published: 07.12.2016
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The present invention relates to a method of deposition of low fluorine tungsten by a sequential CVD process, for example, by alternately pulsing tungsten hexafluoride and hydrogen gas in a cycle of temporally divided pulses. Partial methods include a step of deposing bulk tungsten by the sequential CVD process so as to form tungsten films with low stress having low fluorine composition after a step of deposing a tungsten nucleation layer at low pressure. Methods described on the specification can be performed by combining a non-sequential CVD deposition method and a fluorine-free tungsten deposition method. 순차적인 CVD 펄스들에 의해, 예를 들어, 시간적으로 분리된 펄스들의 사이클들로 텅스텐 헥사플루오라이드 및 수소 가스를 교대로 펄싱함으로써, 벌크 텅스텐을 증착하는 방법들이 본 명세서에 제공된다. 일부 방법들은 저압에서 텅스텐 핵생성 층을 증착하는 단계 뒤이어 저 불소 함량을 가진 저 응력 텅스텐 막들을 형성하도록 순차적인 CVD에 의한 벌크 텅스텐의 증착을 포함한다. 본 명세서에 기술된 방법들은 또한 비순차적인 CVD 증착 기법 및 불소-프리 텅스텐 증착 기법과 조합하여 수행될 수도 있다.