CYCLIC SPIKE ANNEAL CHEMICAL EXPOSURE FOR LOW THERMAL BUDGET PROCESSING

• Main Authors: MICHAELSON TIMOTHY, MARTIN PATRICK M, DAI HUIXIONG, VISSER ROBERT JAN, NARENDRNATH KADTHALA R, THOMPSON DAVID, XU JINGJING, ZHANG LIN
• Format: Patent
• Language: English; Korean
• Published: 02.12.2016
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

단일 프로세싱 챔버 내에서의 막(film)의 순차적 증착 및 어닐링을 위한 장치 및 방법들이 제공된다. 프로세스 가스들로부터 격리되는 구역에서 프로세싱 챔버 내에 포지셔닝되는 에너지 소스가, 형성되고 있는 디바이스의 열 버짓(thermal budget)을 초과함으로 인해 하부 층들을 손상시키지 않으면서, 기판 상에 막을 급속하게 형성하고 분해(decompose)하는 데에 사용될 수 있다. Provided are apparatus and methods for the sequential deposition and annealing of a film within a single processing chamber. An energy source positioned within the processing chamber in an area isolated from process gases can be used to rapidly form and decompose a film on the substrate without damaging underlying layers due to exceeding the thermal budget of the device being formed.