ALD CVD PRECURSOR AND PROCESS DESIGN FOR PHOTO-ASSISTED METAL ATOMIC LAYER DEPOSITION ALD AND CHEMICAL VAPOR DEPOSITION CVD

• Main Authors: BLACKWELL JAMES M, ZIMMERMAN PAUL A, CLENDENNING SCOTT B, KLOSTER GRANT M, ROMERO PATRICIO E, GSTREIN FLORIAN, SIMKA HARSONO S, BRISTOL ROBERT L
• Format: Patent
• Language: English; Korean
• Published: 02.12.2016
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

광 지원형 금속 원자층 퇴적(ALD) 및 화학 기상 퇴적(CVD)을 위한 전구체 및 프로세스 설계가 설명된다. 일례에서, 금속 박막을 제조하는 방법은 기판 상에 또는 위에 표면에 근접하게 전구체 분자들을 도입하는 단계를 포함하며, 전구체 분자들 각각은 리간드들에 의해 둘러싸인 하나 이상의 금속 중심을 갖는다. 방법은 또한 광 지원형 프로세스를 이용하여 전구체 분자들로부터 리간드들을 분해함으로써 표면 상에 금속층을 퇴적하는 단계를 포함한다. Precursor and process design for photo-assisted metal atomic layer deposition (ALD) and chemical vapor deposition (CVD) is described. In an example, a method of fabricating a thin metal film involves introducing precursor molecules proximate to a surface on or above a substrate, each of the precursor molecules having one or more metal centers surrounded by ligands. The method also involves depositing a metal layer on the surface by dissociating the ligands from the precursor molecules using a photo-assisted process.