3 topological phase transition method of three dimensional topological insulator using ultrafast terahertz field modulation
The present invention provides a topological phase transition method of three-dimensional (3D) phase insulator for ultrafast terahertz frequency modulation, to change a coupling degree between an energy level of metallic characteristics of the surface and phonon resonance of the bulk of a 3D phase i...
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Main Authors | , , |
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Format | Patent |
Language | English Korean |
Published |
30.11.2016
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Subjects | |
Online Access | Get full text |
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Summary: | The present invention provides a topological phase transition method of three-dimensional (3D) phase insulator for ultrafast terahertz frequency modulation, to change a coupling degree between an energy level of metallic characteristics of the surface and phonon resonance of the bulk of a 3D phase insulator material by adjusting a composition of the 3D phase insulator material, (Bi_(i-x)In_x)_2Se_3, so as to modulate a spectrum of a terahertz frequency passing the material into an asymmetrical shape. An energy level of a surface (yellow) has a metallic topological surface state (TSS) and indium (In) is added to a material of a 3D phase insulator having an insulator or a phase insulator, so the bulk of the inside asymmetrically generates Fano resonance (FR) through interaction or interference between a first terahertz response generated in the bulk and a second terahertz response generated in a predetermined metallic part.
본 발명은 3차원 위상절연체 물질의 성분비를 조절하여, 위상절연체 표면의 금속특성을 갖는 준위와 벌크의 포논 공진의 커플링 정도를 변화시켜 이 물질을 통과하는 테라헤르츠파의 스펙트럼을 비대칭적 모양으로 모듈레이션하는 3차원 위상절연체의 토플로지 변화 방법을 제공하기 위한 것으로서, 표면(노란색)의 에너지 준위가 금속성의 특성(TSS(topological surface state))이고, 내부의 벌크는 인슐레이터(insulator) 혹은 위상절연체을 가지는 3차원 위상절연체의 물질에 인듐(In)을 첨가하여 상기 벌크에서 발생된 테라헤르츠의 제 1 리스펀스와 상기 금속성 특성부분에서 발생된 테라헤르츠의 제 2 리스펀스 간의 상호작용이나 간섭을 통해 파노 공명(Fano Resonance : FR)을 비대칭성으로 발생시키는 것을 특징으로 한다. |
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Bibliography: | Application Number: KR20150071844 |