REFERENCE LAYER FOR PERPENDICULAR MAGNETIC ANISOTROPY MAGNETIC TUNNEL JUNCTION

• Main Authors: LEE KANGHO, GOTTWALD MATTHIAS GEORG, ZHU XIAOCHUN, PARK CHANDO, KANG SEUNG HYUK
• Format: Patent
• Language: English; Korean
• Published: 16.11.2016
• Subjects: ELECTRICITY; INFORMATION STORAGE; PHYSICS; STATIC STORES

장치는 pMTJ(perpendicular magnetic anisotropy magnetic tunnel junction) 디바이스를 포함한다. pMTJ 디바이스는 저장 층 및 기준 층을 포함한다. 기준 층은 페리자성 효과를 생성하도록 구성된 부분을 포함한다. 그 부분은 제 1 층, 제 2 층, 및 제 3 층을 포함한다. 제 2 층은 pMTJ 디바이스의 동작 동안 제 1 층과 제 3 층을 반강자성으로(AF; antiferromagnetically) 커플링하도록 구성된다. An apparatus includes a perpendicular magnetic anisotropy magnetic tunnel junction (pMTJ) device. The pMTJ device includes a storage layer and a reference layer. The reference layer includes a portion configured to produce a ferrimagnetic effect. The portion includes a first layer, a second layer, and a third layer. The second layer is configured to antiferromagnetically (AF) couple the first layer and the third layer during operation of the pMTJ device.