WIRING STRUCTURES METHODS OF FORMING WIRING STRUCTURES AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES

A method for forming a wiring structure includes the steps of: forming an interlayer insulating film including an opening part on a substrate and having pores on an inner surface and an outer surface thereof; forming a pore sealing film on the surface of the interlayer insulating film and a side wal...

Full description

Saved in:
Bibliographic Details
Main Authors YIM, TAE JIN, OSZINDA THOMAS, LEE, NAE IN, AHN SANG HOON
Format Patent
LanguageEnglish
Korean
Published 16.11.2016
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:A method for forming a wiring structure includes the steps of: forming an interlayer insulating film including an opening part on a substrate and having pores on an inner surface and an outer surface thereof; forming a pore sealing film on the surface of the interlayer insulating film and a side wall of the opening part by supplying a silane compound expressed as a general-formula (Re)a(Si)(R)b(Bu)c; and forming a conductive pattern filling the opening part on the pore sealing film. 배선 구조물 형성 방법에 있어서, 기판 상에 개구부를 포함하며, 내부 및 표면 상에 기공들을 포함하는 층간 절연막을 형성한다. 층간 절연막의 표면 및 개구부의 측벽 상에 일반식 (Re)a(Si)(R)b(Bu)c으로 표시되는 실란 화합물을 공급하여 기공 씰링막을 형성한다. 기공 씰링막 상에 개구부를 채우는 도전 패턴을 형성한다.
Bibliography:Application Number: KR20150064764