Semiconductor device

The present invention provides a semiconductor device improving operation properties of a transistor by using different materials in a channel layer of a PMOS and a channel layer of an NMOS. The semiconductor device includes: a compound semiconductor layer which has a first region and a second regio...

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Bibliographic Details
Main Authors KIM, CHEOL, HA, SEUNG MO, KIM, SEONG JU, KIM, DO HYOUNG, MIRCO CANTORO, KHANG, DONG HOON, HONG, WOONG KI, KWON, TAE YONG, CHOI, YONG JOON, MUN, SEUNG JIN, YANG, CHANG JAE, KIM, WOO RAM, YOU, SO RA
Format Patent
LanguageEnglish
Korean
Published 02.11.2016
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