Semiconductor device
The present invention provides a semiconductor device improving operation properties of a transistor by using different materials in a channel layer of a PMOS and a channel layer of an NMOS. The semiconductor device includes: a compound semiconductor layer which has a first region and a second regio...
Saved in:
Main Authors | , , , , , , , , , , , , |
---|---|
Format | Patent |
Language | English Korean |
Published |
02.11.2016
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Be the first to leave a comment!