METHODS OF FORMING PATTERNS
Some embodiments include a method for forming patterns. A first mask is formed on a material. The first mask has a feature extended to the inside and defines a first pattern. The first pattern has a first level of uniformity over the distribution of the feature. A brush layer is formed in the featur...
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Main Authors | , , , , , , , , , , |
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Format | Patent |
Language | English Korean |
Published |
20.10.2016
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Subjects | |
Online Access | Get full text |
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Summary: | Some embodiments include a method for forming patterns. A first mask is formed on a material. The first mask has a feature extended to the inside and defines a first pattern. The first pattern has a first level of uniformity over the distribution of the feature. A brush layer is formed in the feature over the first mask, makes the feature narrow, and writes a second mask from the first mask. The second mask has a second level of uniformity which is higher than the first level of uniformity over the narrow feature. A pattern is transferred to the material through the second mask. So, the density of an integrated circuit can be improved.
몇몇 실시형태는 패턴을 형성하는 방법을 포함한다. 제1 마스크는 재료 위에 형성된다. 제1 마스크는 내부에 연장되는 피처를 갖고 제1 패턴을 획정한다. 제1 패턴은 피처의 분포에 걸쳐 제1 수준의 균일성을 갖는다. 브러시 층은 제1 마스크에 걸쳐 피처 내에 형성되어 피처를 협소화시켜 제1 마스크로부터 제2 마스크를 작성한다. 제2 마스크는 협소화된 피처에 걸쳐 제1 수준의 균일성보다 큰 제2 수준의 균일성을 갖는다. 패턴은 제2 마스크를 통해 상기 재료로 전사된다. |
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Bibliography: | Application Number: KR20160132962 |