NEURAL ELECTRODE FOR MEASURING NEURAL SIGNAL AND METHOD FOR MANUFACTURING THEREOF

Disclosed is a method for manufacturing a neural electrode for measuring a neural signal. The method for manufacturing a neural electrode for measuring a neural signal includes a step of forming an indium-tin oxide (ITO) electrode on a substrate; a step of forming an insulating passive state layer o...

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Bibliographic Details
Main Authors KIM, GOOK HWA, KIM, AH YOUNG, KIM, YONG HEE, JUNG, SANG DON
Format Patent
LanguageEnglish
Korean
Published 28.09.2016
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Summary:Disclosed is a method for manufacturing a neural electrode for measuring a neural signal. The method for manufacturing a neural electrode for measuring a neural signal includes a step of forming an indium-tin oxide (ITO) electrode on a substrate; a step of forming an insulating passive state layer on a substrate and the ITO electrode to expose part of the ITO electrode; and a step of forming ITO nanowires on the insulating passive state layer and the part of the ITO electrode. According to the present invention, an electric noise can be reduced by an existing process. Also, a neural friendly property can be improved. 신경 신호 측정용 신경전극 제조 방법이 개시된다. 개시된 신경 신호 측정용 신경전극 제조 방법은, 기판 상에 ITO 전극을 형성하는 단계; 상기 기판 및 상기 ITO 전극 상에 상기 ITO 전극의 일부분이 노출되도록 절연성 부동태층을 형성하는 단계; 및 상기 ITO 전극의 일부분 및 상기 절연성 부동태층 상에 ITO 나노선들을 형성하는 단계;를 포함한다. 본 발명에 따르면, 기존의 공정을 이용하여 전기적 잡음의 감소와 함께 신경 친화성 향상을 도모할 수 있는 장점이 있다.
Bibliography:Application Number: KR20150038002