SELF-ALIGNED DOUBLE PATTERNING WITH SPATIAL ATOMIC LAYER DEPOSITION

• Main Authors: TANAKA KEIICHI, MARCUS STEVEN D, XIA LI QUN, NGUYEN VICTOR, LI NING, BALSEANU MIHAELA
• Format: Patent
• Language: English; Korean
• Published: 26.09.2016
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

피처 트리밍을 포함하는 자기-정렬 이중 패터닝 방법들이 제공된다. SADP 프로세스는 단일 배치 프로세싱 챔버에서 수행되고, 그러한 단일 배치 프로세싱 챔버에서, 기판은, 각각의 섹션이 독립적으로 프로세스 조건을 갖도록, 가스 커튼들에 의해 분리된, 프로세싱 챔버의 섹션들 사이에서 측방향으로 이동된다. Provided are self-aligned double patterning methods including feature trimming. The SADP process is performed in a single batch processing chamber in which the substrate is laterally moved between sections of the processing chamber separated by gas curtains so that each section independently has a process condition.