POLY-CRYSTALLINE SILICON INGOT, SILICON WAFER THEREFROM AND METHOD OF FABRICATING POLY-CRYSTALLINE SILICON INGOT

• Main Authors: CHOU HUNG SHENG, YANG CHENG JUI, LAN CHUNG WEN, CHIANG YU TSUNG, YU WEN HUAI, HSU SUNG LIN, YANG YU MIN, LAN WEN CHIEH, HSU WEN CHING, PAI KAI YUAN
• Format: Patent
• Language: English; Korean
• Published: 07.09.2016
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; COMPOUNDS THEREOF; CRYSTAL GROWTH; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INORGANIC CHEMISTRY; METALLURGY; NON-METALLIC ELEMENTS; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

Provided are a crystalline silicon ingot and a production method thereof. In the method of the present invention, in order to promote vertical growth and nuclear formation of silicon grains on a nuclear formation-promoting layer from a molten silicon solution, the nuclear formation-promoting layer is used until the crystalline silicon ingot is obtained after the molten silicon solution is completely solidified. 본 발명은 결정질 실리콘 잉곳 및 이의 제조방법을 제공한다. 본 발명의 방법은 다수의 실리콘 그레인이 실리콘 용융액으로부터 핵형성 촉진층 상에 핵 형성 및 수직방향으로 성장을 촉진하기 위해 실리콘 용융액이 완전히 고체화되어 결정질 실리콘 잉곳이 얻어질 때까지 핵형성 촉진층을 사용한다.