INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME

• Main Authors: KIM, HYUN JO, RHEE, HWA SUNG, LEE, YOON SEOK, JEONG, HEE DON, JEONG, BO CHEOL, CHUNG, JAE YUP, PARK, SE WAN
• Format: Patent
• Language: English; Korean
• Published: 01.09.2016
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

An integrated circuit device comprises first and second fin-type active regions having different conductive type channel regions wherein a first device isolation layer covers both sidewalls of the first fin-type active region, and a second device isolation layer covers both sidewalls of the second f...