INTERFACE TREATMENT OF SEMICONDUCTOR SURFACES WITH HIGH DENSITY LOW ENERGY PLASMA

Ge 또는 III-V 족 화합물 반도체 재료들을 함유하는 반도체 표면들의 소프트 플라즈마 표면 처리에서, 전자 빔 플라즈마 소스가 사용된다. An electron beam plasma source is used in a soft plasma surface treatment of semiconductor surfaces containing Ge or group III-V compound semiconductor materials....

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Bibliographic Details
Main Authors DORF LEONID, NAINANI ANEESH, ZOPE BHUSHAN N, ABRAHAM MATHEW, DESHMUKH SUBHASH, BRAND ADAM, RAUF SHAHID
Format Patent
LanguageEnglish
Korean
Published 13.06.2016
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Ge 또는 III-V 족 화합물 반도체 재료들을 함유하는 반도체 표면들의 소프트 플라즈마 표면 처리에서, 전자 빔 플라즈마 소스가 사용된다. An electron beam plasma source is used in a soft plasma surface treatment of semiconductor surfaces containing Ge or group III-V compound semiconductor materials.
Bibliography:Application Number: KR20167011702