FUNCTIONAL FILM

• Main Author: ITO HIROHIDE
• Format: Patent
• Language: English; Korean
• Published: 04.05.2016
• Subjects: BASIC ELECTRIC ELEMENTS; CABLES; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; COMPOUNDS THEREOF; CONDUCTORS; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; INORGANIC CHEMISTRY; INSULATORS; METALLURGY; NON-METALLIC ELEMENTS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

본 발명은 고온 고습 하에서의 내구성 및 굴곡 내성이 우수한 기능성 막을 제공하는 것을 목적으로 한다. 본 발명은 하기 화학식(1): (식 중, M은 장주기형 주기율표의 제13족 원소로 이루어지는 군에서 선택되는 적어도 1종을 나타내고, w, x, y 및 z는 M, 산소, 질소 및 탄소 각각의 규소에 대한 원소 비이며, 하기 수식 (1) 내지 (4)를 만족함)로 표현되는 화학 조성을 포함하고, 또한 IR 스펙트럼으로 관찰한 1050cm부근의 Si-O에서 유래되는 흡수 강도에 대하여 2200cm부근의 Si-H에서 유래되는 흡수 강도의 비(I/I)가 0.03 이하인 기능성 막이다. The purpose of the present invention is to provide a functional film exhibiting excellent bending resistance and durability under high temperatures and high humidities. The present invention provides a functional film which includes a chemical composition represented by chemical formula (1) (in chemical formula (1): M represents at least one element selected from the group consisting of the group 13 elements in the long-form periodic table; and w, x, y, and z are respectively the elemental ratio of M to silicon, the elemental ratio of oxygen to silicon, the elemental ratio of nitrogen to silicon, and the elemental ratio of carbon to silicon, and satisfy mathematical expressions (1)-(4)). In the functional film, the ratio (I[Si-H]/I[Si-O]) of the intensity of absorption in the vicinity of 2200 cm-1 due to Si-H, to the intensity of absorption in the vicinity of 1050 cm-1 due to Si-O, said intensities being observed in the IR spectrum, is not more than 0.03.