REACTIVE SPUTTERING DEVICE

• Main Authors: KIYOTA JUNYA, OHNO TETSUHIRO, SATO SHIGEMITSU, TAKEI MASAKI, ISOBE TATSUNORI
• Format: Patent
• Language: English; Korean
• Published: 18.04.2016
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

본 개시 기술의 반응성 스퍼터 장치는, 성막(成) 대상물에 형성해야 할 화합물 막의 형성영역으로 향하여 스퍼터입자를 방출하는 캐소드 장치를 구비한다. 상기 형성영역과 마주하는 공간이 대향영역이고, 상기 캐소드 장치는 부식영역을 상기 대향영역에 주사(走査)하는 주사부와, 상기 부식영역이 형성되고 주사방향에 대하여 길이가 상기 대향영역보다도 짧은 타겟을 구비한다. 상기 주사부는, 상기 주사방향으로 상기 형성영역의 두 단부의 안쪽, 상기 스퍼터입자가 먼저 도달하는 제1 단부와 상기 주사방향으로 상기 형성영역의 상기 제1 단부에 가까운 상기 타겟의 제1 단부와의 거리가, 상기 주사방향으로 150mm이상인 개시위치에서 상기 대향영역에 향하여 상기 부식영역을 주사한다. This reactive sputtering device comprises a cathode device (18) that emits sputtering particles to a compound film formation region (R1). The cathode device (18) includes: a scanning unit (27) that scans an erosion region in an opposing region (R2); and a target (23) in which the erosion region is formed, and that has a length, in the scanning direction, that is shorter than that of the opposing region (R2). The scanning unit (27) scans the erosion region toward the opposing region (R2) from a starting position (St) where the distance (D1) between a first end (Re1), of the two ends of the formation region (R1) in the scanning direction, at which the sputtering particles arrive first and a first end (23e1) of the target (23) closer to the first end (Re1) of the formation region in the scanning direction is 150 mm or greater in the scanning direction.