SEMICONDUCTOR DEVICE AND METHOD

A vertical gate all around (VGAA) is provided. In embodiments, the VGAA has a nanowire with a first contact pad and a second contact pad. A gate electrode is utilized to help define a channel region within the nanowire. In additional embodiments, multiple nanowires, multiple bottom contacts, multipl...

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Bibliographic Details
Main Authors TSAI CHING WEI, OHTOU TETSU, HSIEH MING TA, WANG CHIH HAO
Format Patent
LanguageEnglish
Korean
Published 28.03.2016
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES
NANOTECHNOLOGY
PERFORMING OPERATIONS
SEMICONDUCTOR DEVICES
SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
TRANSPORTING
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Summary:A vertical gate all around (VGAA) is provided. In embodiments, the VGAA has a nanowire with a first contact pad and a second contact pad. A gate electrode is utilized to help define a channel region within the nanowire. In additional embodiments, multiple nanowires, multiple bottom contacts, multiple top contacts, and multiple gate contacts are utilized. VGAA(vertical gate all around)가 제공된다. 실시예에서, VGAA는 제1 콘택트 패드 및 제2 콘택트 패드를 갖는 나노와이어를 갖는다. 나노와이어 내에 채널 영역을 정의하는 것을 돕는 게이트 전극이 이용된다. 추가의 실시예에서, 다수의 나노와이어, 다수의 하부 콘택트, 다수의 상부 콘택트 및 다수의 게이트 콘택트가 이용된다.
Bibliography:Application Number: KR20140171989