SEMICONDUCTOR LIGHT EMITTING DEVICE
An embodiment of the present invention provides a semiconductor light emitting device for preventing the degradation of reliability. The semiconductor light emitting device includes: a semiconductor laminate which has a first and a second surface which face each other and a lateral surface between t...
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Main Authors | , , , , |
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Format | Patent |
Language | English Korean |
Published |
11.03.2016
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Subjects | |
Online Access | Get full text |
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Summary: | An embodiment of the present invention provides a semiconductor light emitting device for preventing the degradation of reliability. The semiconductor light emitting device includes: a semiconductor laminate which has a first and a second surface which face each other and a lateral surface between them, a first and a second conductivity type semiconductor layer provided to each of the first and the second surface, and an active layer located between them; a first electrode which is located on the first surface of the semiconductor laminate and is connected to the first conductivity type semiconductor layer; a second electrode which is located on the second surface of the semiconductor laminate and is connected to the second conductivity type semiconductor layer; a connecting electrode which is connected to the second electrode and is extended to the first surface of the semiconductor laminate; a support substrate which is located on the second electrode; and an insulating layer which is arranged among the connecting electrode, the active layer, and the first conductivity type semiconductor layer.
본 발명의 일 실시예는, 서로 반대에 위치한 제1 및 제2 면과 그 사이의 측면을 가지며, 각각 상기 제1 및 제2 면을 제공하는 제1 및 제2 도전형 반도체층과 그 사이에 위치한 활성층을 갖는 반도체 적층체와, 상기 반도체 적층체의 제1 면에 위치하며 상기 제1 도전형 반도체층에 접속된 제1 전극과, 상기 반도체 적층체의 제2 면에 위치하며 상기 제2 도전형 반도체층에 접속된 제2 전극과, 상기 제2 전극에 연결되어 상기 반도체 적층체의 제1 면까지 연장된 연결 전극(connecting electrode)과, 상기 제2 전극 상에 위치하는 지지 기판과, 상기 연결 전극과 상기 활성층 및 상기 제1 도전형 반도체층 사이에 배치된 절연막을 포함하는 반도체 발광소자를 제공한다. |
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Bibliography: | Application Number: KR20140116461 |