MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

A method for manufacturing a semiconductor device according to an embodiment of the present invention may include the steps of: mounting a substrate including a metal layer having an oxidized surface layer in a heat treatment chamber; generating a hydrogen radical in the heat treatment chamber; and...

Full description

Saved in:
Bibliographic Details
Main Authors LEE, EUN YOUNG, LIM, HUN HYEONG, CHOI, EUN YEOUNG, GO, HYUN YONG, KIM, JIN GYUN, JEE, JUNG GEUN
Format Patent
LanguageEnglish
Korean
Published 08.03.2016
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:A method for manufacturing a semiconductor device according to an embodiment of the present invention may include the steps of: mounting a substrate including a metal layer having an oxidized surface layer in a heat treatment chamber; generating a hydrogen radical in the heat treatment chamber; and deoxidizing the oxidized surface layer of the metal layer using the hydrogen radical. The objective of the present invention is to provide the method for manufacturing the semiconductor device, which can suppress increase in resistance of a gate electrode by preventing oxidation of the gate electrode of the semiconductor device. 본 발명의 실시예에 따른 반도체 장치의 제조 방법은, 산화된 표면층을 갖는 금속층을 포함하는 기판을 열처리 챔버 내에 장착하는 단계, 열처리 챔버 내에 수소 라디칼을 생성하는 단계, 및 수소 라디칼을 이용해 금속층의 산화된 표면층을 환원하는 단계를 포함할 수 있다.
Bibliography:Application Number: KR20140111858