FORMING METHOD OF SILICON-CONTAINING THIN FILM

• Main Authors: HAN, WON SEOK, KOH, WON YONG
• Format: Patent
• Language: English; Korean
• Published: 07.03.2016
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The present invention relates to a method for manufacturing a silicon-containing thin film by using a chlorosilane compound represented by Si_nCl_2n+2, where n is an integer of about 3 to about 10. Especially, the present invention can form a silicon nitride thin film with superior quality on a surface with unevenness of which a height to width ratio is large in a uniform thickness, by an atomic layer deposition method using ammonia gas at low temperatures of about 560°C or lower. According to the present invention, various silicon-containing thin films having a uniform thickness can be form on a surface of a base material having unevenness such as a fine groove or the like. 본원은 SiCl(이때, n은 약 3 이상 내지 약 10 이하의 정수)로서 표시되는 클로로실란 화합물을 사용하여 실리콘-함유 박막을 제조하는 방법에 관한 것으로서, 특히 약 560℃ 이하의 낮은 온도에서 암모니아 기체를 사용한 원자층 증착법에 의하여 종횡비가 큰 요철이 있는 표면에 균일한 두께로 품질이 우수한 실리콘 질화물 박막을 형성할 수 있다.