METHOD FOR PRODUCING INDIUM ALKOXIDE COMPOUNDS, INDIUM ALKOXIDE COMPOUNDS PRODUCIBLE ACCORDING TO SAID METHOD AND THE USE THEREOF

• Main Authors: NEUMANN ANITA, STEIGER JUERGEN, HOPPE ARNE, MERKULOV ALEXEY, FRUEHLING DENNIS, PHAM DUY VU
• Format: Patent
• Language: English; Korean
• Published: 04.03.2016
• Subjects: ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM; BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; ORGANIC CHEMISTRY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

본 발명은 인듐 트리할라이드 InX(식 중, X = F, Cl, Br, I) 와 R'NH (식 중, R' = 알킬) 의 2 차 아민을, 인듐 트리할라이드에 대해 8:1 내지 20:1 의 몰비로, 일반식 ROH (식 중, R = 알킬) 의 알코올의 존재 하에서 반응시킴으로써 제조가능한 인듐 알콕시드 화합물, 그의 제조 방법, 및 인듐 옥시드-함유 또는 (반)도체 층의 제조를 위한 그 용도에 관한 것이다. The present invention relates to indium alkoxide compounds preparable by reacting an indium trihalide InX3 where X=F, Cl, Br, I with a secondary amine of the formula R′2NH where R′=alkyl, in a molar ratio of 8:1 to 20:1 in relation to the indium trihalide, in the presence of an alcohol of the generic formula ROH where R=alkyl, to a process for preparation thereof and to the use thereof for production of indium oxide-containing or (semi)conductive layers.