SEMICONDUCTOR DEVICE, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND METHOD OF FORMING EPITAXIAL LAYER

• Main Authors: LEE, WOO SUNG, LIM, HUN HYEONG, KIM, CHAE HO, LEE, JOON SUK, AN, KYONG WON, LEE, WOONG
• Format: Patent
• Language: English; Korean
• Published: 04.03.2016
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The present invention relates to a manufacturing method of a semiconductor device according to an embodiment of the present invention includes a step of alternatively stacking up layer insulation layers and sacrificial layers on a substrate; a step of forming opening units forming recesses on the substrate by penetrating through the layer insulation layers and the sacrificial layers; a step of forming a first epitaxial layer along a recessed surface of the substrate within a recess region of the substrate; and a step of filling the recess region of the substrate with the first epitaxial layer as a seed layer and forming a second epitaxial layer extended to the upper side of the substrate. The purpose of the present invention is to provide the semiconductor device with improved reliability and the manufacturing method of the semiconductor device. 본 발명의 실시예에 따른 반도체 장치의 제조방법은, 기판 상에 층간 절연층들 및 희생층들을 교대로 적층하는 단계, 층간 희생층들 및 희생층들을 관통하여 기판을 리세스시키는 개구부들을 형성하는 단계, 기판의 리세스 영역 내에, 기판의 리세스된 면을 따라 제1 에피택시얼층을 형성하는 단계, 및 제1 에피택시얼층을 시드층으로 이용하여, 기판의 리세스 영역을 채우고 기판의 상부로 연장되는 제2 에피택시얼층을 형성하는 단계를 포함한다.