COVERAGE OF HIGH ASPECT RATIO FEATURES USING SPIN-ON DIELECTRIC THROUGH A WETTED SURFACE WITHOUT A PRIOR DRYING STEP

A method comprises the step of depositing a membrane solution on a patterned feature of a semiconductor substrate without performing a drying step after wet cleaning the semiconductor substrate. The membrane solution comprises a dielectric membrane precursor, or at least one among a reaction materia...

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Bibliographic Details
Main Authors HYMES DIANE, DRAEGER NERISSA, LIMARY RATCHANA, GOTTSCHO RICHARD
Format Patent
LanguageEnglish
Korean
Published 19.02.2016
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Summary:A method comprises the step of depositing a membrane solution on a patterned feature of a semiconductor substrate without performing a drying step after wet cleaning the semiconductor substrate. The membrane solution comprises a dielectric membrane precursor, or at least one among a reaction material, a solvent, a surfactant, and a carrier fluid, and the dielectric membrane precursor. The method comprises the step of baking out at least one from a solvent of the membrane formed by the membrane solution and a non-reacted solution, by heating the substrate at a baking temperature. In addition, the method comprises the step of curing the substrate. 방법은 반도체 기판을 습식 세정한 후 그리고 습식 세정 후의 건조 단계를 수행하지 않고서 반도체 기판의 패터닝된 피처 상에 막 용액을 증착하는 단계를 포함한다. 막 용액은 유전체 막 전구체 또는 유전체 막 전구체와 반응 물질, 용매, 계면활성제 및 캐리어 유체 중 적어도 하나를 포함한다. 방법은 베이킹 온도로 기판을 가열함으로써 막 용액에 의해 형성된 막의 용매와 미반응 용액 중 적어도 하나를 베이킹 아웃하는 단계를 포함한다. 방법은 기판을 경화하는 단계를 포함한다.
Bibliography:Application Number: KR20150113299