SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

• Main Authors: KAWASAKI ATSUKO, YOSHIDA TAKAMITSU, UTSUMI KUNIAKI, TANIDA KAZUMASA
• Format: Patent
• Language: English; Korean
• Published: 18.01.2016
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

According to an embodiment, a semiconductor device is provided. The semiconductor device comprises an insulation layer, an electrode, and a groove. The insulation layer is formed on a surface of a substrate. The electrode is buried in the insulation layer, and one end surface of the electrode is exposed from the insulation layer. The groove is formed around the electrode on the surface of the substrate. The groove has an outside surface of the electrode as one side surface, and the groove is opened on a surface side of the insulation layer. The one end surface of the electrode, which is buried in the insulation layer, protrudes from the surface of the insulation layer. 실시 형태에 따르면, 반도체 장치가 제공된다. 반도체 장치는 절연층과, 전극과, 홈을 구비한다. 절연층은 기판 표면에 형성된다. 전극은 절연층에 매설되어 한쪽 단부면이 절연층으로부터 노출된다. 홈은 기판 표면의 전극 주위에 형성된다. 또한, 홈은 전극의 외측면을 한쪽 측면으로 하여, 절연층의 표면측이 개방된다. 절연층에 매설되는 전극은 한쪽 단부면이 절연층의 표면으로부터 돌출된다.