DEVELOPING METHOD, DEVELOPING APPARATUS AND COMPUTER READABLE STORAGE MEDIUM

The present invention is to provide a developing method capable of forming a resist having sufficiently high uniformity of critical dimension (CD) distribution. The disclosed developing method is to form a resist pattern by developing a resist film after exposure to a surface of a substrate, and com...

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Bibliographic Details
Main Authors ISEKI TOMOHIRO, TAKEGUCHI HIROFUMI, TERASHITA YUICHI
Format Patent
LanguageEnglish
Korean
Published 28.12.2015
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CINEMATOGRAPHY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
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Summary:The present invention is to provide a developing method capable of forming a resist having sufficiently high uniformity of critical dimension (CD) distribution. The disclosed developing method is to form a resist pattern by developing a resist film after exposure to a surface of a substrate, and comprises the processes of: (A) supplying a developer toward a rotating substrate; (B) making the resist film react with the developer; and (C) removing the developer from the surface of the resist film in order to stop the reaction between the resist film and the developer, in a sequence thereof. In the process (A), a discharge hole of the developer and and a liquid nozzle having a surface facing the resist film as being horizontally extended from the discharge hole are used together. In the process (C), a boundary between a reaction stop area of the surface of the resist film from which the developer is removed and a reaction proceeding area of the surface of the resist film where the reaction with the developer continues is moved to an edge part from a center part of the resist film. 본 발명의 과제는, CD 분포의 균일성이 충분히 높은 레지스트를 형성할 수 있는 현상 방법을 제공하는 것이다. 본 개시에 관한 현상 방법은, 기판 표면 상의 노광 후의 레지스트막을 현상하여 레지스트 패턴을 형성하기 위한 것이며, (A) 회전하는 기판을 향해 현상액을 공급하는 공정과, (B) 레지스트막과 현상액을 반응시키는 공정과, (C) 레지스트막과 현상액과의 반응을 정지시키기 위해 레지스트막 표면으로부터 현상액을 제거하는 공정을 이 순서로 구비하고, (A) 공정에 있어서, 현상액의 토출구와, 토출구로부터 횡방향으로 확대되고 또한 레지스트막과 대향하는 면을 갖는 접액 노즐을 사용함과 함께, (C) 공정에 있어서, 현상액이 제거된 레지스트막 표면의 반응 정지 영역과, 현상액과의 반응이 계속되고 있는 레지스트막 표면의 반응 진행 영역과의 경계를 레지스트막의 중심부로부터 주연부를 향해 이동시킨다.
Bibliography:Application Number: KR20150082587