STRUCTURE AND FORMATION METHOD OF FIN-LIKE FIELD EFFECT TRANSISTOR

• Main Authors: LIN TZU KAI, JENG CHI CHERNG, JANGJIAN SHIU KO
• Format: Patent
• Language: English; Korean
• Published: 23.12.2015
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Provided are a structure of a semiconductor device and a formation method thereof. The semiconductor device comprises a semiconductor substrate and a fin structure over the semiconductor substrate. The semiconductor device also includes a gate stack covering a portion of the fin structure and an epi...