CZOCHRALSKI CRUCIBLE FOR CONTROLLING OXYGEN AND RELATED METHODS

• Main Authors: SWAMINATHAN TIRUMANI N, ZEPEDA SALVADOR, HILKER JOHN DAVID
• Format: Patent
• Language: English; Korean
• Published: 17.11.2015
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION; TECHNICAL SUBJECTS COVERED BY FORMER USPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

멜트로부터 잉곳을 성장시키기 위한 시스템은 제1 도가니, 제2 도가니 및 위어를 포함한다. 제1 도가니는 멜트를 담기 위한 외부 공동을 형성하는 제1 베이스 및 제1 측벽을 가진다. 위어는 제1 측벽으로부터 안쪽의 위치에 있는 제1 베이스의 상부에 위치되어 위어의 바깥쪽의 위치로부터 위어의 안쪽의 위치로의 멜트의 이동을 억제한다. 제2 도가니는 외부 공동 내의 배치를 위해 크기가 정해지며, 내부 공동을 형성하는 제2 베이스 및 제2 측벽을 가진다. 또한 관련 방법들이 개시된다. A system for growing an ingot from a melt includes a first crucible, a second crucible, and a weir. The first crucible has a first base and a first sidewall that form an outer cavity for containing the melt. The weir is located on top of the first base at a location inward from the first sidewall to inhibit movement of the melt from a location outward of the weir to a location inward of the weir. The second crucible is sized for placement within the outer cavity and has a second base and a second sidewall that form an inner cavity. Related methods are also disclosed.