METHOD FOR MANUFACTURING OF A SEMICONDUCTOR DEVICE

A method for manufacturing a semiconductor device performs plasma heat treatment while providing gas for adjusting a threshold voltage to at least a part of a substrate to form a fixed charge area having fixed charges on a surface of the substrate. In addition, at least one MOS transistor is formed...

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Bibliographic Details
Main Authors KIM, DONG WON, KANG, MYUNG GIL, CHO, KEUN HWI, HARADA YOSHINAO, PARK, JAE YOUNG
Format Patent
LanguageEnglish
Korean
Published 17.11.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for manufacturing a semiconductor device performs plasma heat treatment while providing gas for adjusting a threshold voltage to at least a part of a substrate to form a fixed charge area having fixed charges on a surface of the substrate. In addition, at least one MOS transistor is formed on the substrate having the fixed charge area. A threshold voltage of the MOS transistor is easily adjusted by the method for manufacturing a semiconductor device. 반도체 소자의 제조 방법에서, 기판의 적어도 일부분 상에 문턱 전압 조절용 가스를 제공하면서 플라즈마 열처리를 수행하여, 상기 기판 표면 부위에 고정 전하를 포함하는 고정 전하 영역을 형성한다. 또한, 상기 고정 전하 영역을 포함하는 기판 상에 적어도 하나의 MOS 트랜지스터를 형성한다. 상기 반도체 소자의 제조 방법에 의하면, MOS 트랜지스터의 문턱 전압을 용이하게 조절할 수 있다.
Bibliography:Application Number: KR20140054281