COMPOSITE CONTACT PLUG STRUCTURE AND METHOD OF MAKING SAME

According to an embodiment, a contact plug includes a bilayer structure and a diffusion barrier layer on a sidewall and a bottom surface of the bilayer structure. The bilayer structure includes a conductive core and a conductive liner on a sidewall and a bottom surface of the conductive core. In the...

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Bibliographic Details
Main Authors LIN SHENG HSUAN, LIN YU HUNG, CHANG CHIH WEI, CHOU YOU HUA, HSU CHIA LIN
Format Patent
LanguageEnglish
Korean
Published 09.11.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:According to an embodiment, a contact plug includes a bilayer structure and a diffusion barrier layer on a sidewall and a bottom surface of the bilayer structure. The bilayer structure includes a conductive core and a conductive liner on a sidewall and a bottom surface of the conductive core. In the contact plug of the embodiment, the conductive liner comprises cobalt or ruthenium. 실시예의 접촉 플러그는 이중층 구조 및 이중층 구조의 측벽 및 하부 표면 상의 확산 배리어 층을 포함한다. 이중층 구조는 전도성 코어 및 전도성 코어의 측벽 및 하부 표면 상의 전도성 라이너를 포함한다. 실시예의 접촉 플러그에서, 전도성 라이너는 코발트 또는 루테늄을 포함한다.
Bibliography:Application Number: KR20140183524