TWO-STEP DEPOSITION WITH IMPROVED SELECTIVITY

A method for providing an electroless plating over at least one copper containing layer is provided. Surfaces of the at least one copper containing layer are sealed by selectively depositing a sealing layer of catalytically active metal on the at least one copper containing layer. The sealing layer...

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Bibliographic Details
Main Authors KOLICS ARTUR, NALLA PRAVEEN, VARADARAJAN SESHASAYEE
Format Patent
LanguageEnglish
Korean
Published 05.10.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for providing an electroless plating over at least one copper containing layer is provided. Surfaces of the at least one copper containing layer are sealed by selectively depositing a sealing layer of catalytically active metal on the at least one copper containing layer. The sealing layer is exposed to an electroless deposition bath that is more reactive to the catalytically active metal than to the at least one copper containing layer to provide an electroless deposition on the sealing layer. 적어도 하나의 구리 함유층 위에 무전해 도금을 제공하기 위한 방법이 제공된다. 적어도 하나의 구리 함유층 상에 촉매적 활성 금속의 시일 층 (sealing layer) 을 선택적으로 디포지션 (deposit) 함으로써 적어도 하나의 구리 함유층의 표면들이 시일된다. 시일 층 상에 무전해 디포지션을 제공하기 위해 적어도 하나의 구리 함유층보다 촉매적 활성 금속에 더 반응성인 무전해 디포지션 욕에 시일 층이 노출된다.
Bibliography:Application Number: KR20150041616