FERRITIC STAINLESS STEEL SHEET HAVING EXCELLENT BRAZABILITY, HEAT EXCHANGER, FERRITIC STAINLESS STEEL SHEET FOR HEAT EXCHANGERS, FERRITIC STAINLESS STEEL, FERRITIC STAINLESS STEEL FOR MEMBERS OF FUEL SUPPLY SYSTEMS, AND MEMBER OF FUEL SUPPLY SYSTEM

• Main Authors: ONO NAOTO, HIRAIDE NOBUHIKO, MATSUHASHI TOORU, MORIHIRO NORIYO
• Format: Patent
• Language: English; Korean
• Published: 02.10.2015
• Subjects: ALLOYS; BLASTING; CHEMICAL SURFACE TREATMENT; CHEMISTRY; CLEANING OR DEGREASING OF METALLIC MATERIAL BY CHEMICALMETHODS OTHER THAN ELECTROLYSIS; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OFGENERAL APPLICATION; DIFFUSION TREATMENT OF METALLIC MATERIAL; FERROUS OR NON-FERROUS ALLOYS; HEAT EXCHANGE IN GENERAL; HEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS,IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT; HEATING; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; LIGHTING; MECHANICAL ENGINEERING; METALLURGY; TREATMENT OF ALLOYS OR NON-FERROUS METALS; WEAPONS

이 페라이트계 스테인리스 강판의 일 형태는, 질량%로, C : 0.03% 이하, N : 0.05% 이하, Si : 1% 이하, Mn : 1.2% 이하, Cr : 14% 이상 28% 이하, Nb : 8(C＋N) 이상 0.8% 이하 및 Al : 0.1% 이하를 함유하고, 잔량부가 Fe 및 불가피 불순물로 이루어지고, 표면에 식 1을 충족하는 피막이 형성되어 있다. d×Cr＋5(Si＋3Al)≤2.0 ... (식 1) d는 피막의 두께(㎚)를 나타내고, Cr는 피막 중의 Cr 양이온 분율을 나타내고, Si는 피막 중의 Si 양이온 분율을 나타내고, Al는 피막 중의 Al 양이온 분율을 나타낸다. One aspect of this ferritic stainless steel sheet contains, by mass%, C: 0.03% or less, N: 0.05% or less, Si: 1% or less, Mn: 1.2% or less, Cr: 14% or more and 28% or less, Nb: 8(C + N) or more and 0.8% or less, and Al: 0.1% or less, with a balance being Fe and inevitable impurities, in which a film satisfying Expression 1 is formed in a surface thereof. In Expression 1, d f represents a thickness (nm) of the film, Cr f represents a Cr cationic fraction in the film, Si f represents a Si cationic fraction in the film, and Al f represents an Al cationic fraction in the film.