IN-SITU CARBON AND OXIDE DOPING OF ATOMIC LAYER DEPOSITION SILICON NITRIDE FILMS

Embodiments disclosed in the present invention generally relate to processing of substrates and, more specifically, to methods for forming a dielectric film. The methods in an embodiment comprise the following steps: arranging multiple substrates inside a processing chamber; performing a sequence of...

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Main Authors SALY MARK, MARCUS STEVEN D, XIA LI QUN, THOMPSON DAVID, NGUYEN VICTOR, LI NING, BALSEANU MIHAELA
Format Patent
LanguageEnglish
Korean
Published 16.09.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Embodiments disclosed in the present invention generally relate to processing of substrates and, more specifically, to methods for forming a dielectric film. The methods in an embodiment comprise the following steps: arranging multiple substrates inside a processing chamber; performing a sequence of steps for expositing substrates to a first reactive gas including silicon and then, exposing substrates to plasma of a second reactive gas including at least one among oxygen or carbon and nitrogen; and repeating the sequence for forming a dielectric film including silicon carbon nitride or silicon carbon acid nitride on each substrate.
Bibliography:Application Number: KR20150031093