LED WITH SHAPED GROWTH SUBSTRATE FOR SIDE EMISSION

An array of optical features is formed in a surface of a relatively thick growth substrate wafer. LED layers are epitaxially grown over the opposite surface of the growth substrate wafer. The LED layers include an active layer that emits light towards the growth substrate wafer. The resulting LED wa...

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Bibliographic Details
Main Author BUTTERWORTH MARK MELVIN
Format Patent
LanguageEnglish
Korean
Published 15.09.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:An array of optical features is formed in a surface of a relatively thick growth substrate wafer. LED layers are epitaxially grown over the opposite surface of the growth substrate wafer. The LED layers include an active layer that emits light towards the growth substrate wafer. The resulting LED wafer is singulated to form individual LED dies having a growth substrate portion, wherein each growth substrate portion has at least one of the optical features. The optical features redirect a majority of light emitted from the active layer to exit the LED die through sidewalls of the growth substrate portion. The side-emitting LED die is mounted in a reflective cup and encapsulated with a phosphor material. The LED light thus energizes phosphor grains that are not overlying the LED die, so less phosphor light is absorbed by the LED die and efficiency is improved.
Bibliography:Application Number: KR20157021472