METHOD FOR PRODUCING OPTOELECTRONIC SEMICONDUCTOR CHIPS, AND OPTOELECTRONIC SEMICONDUCTOR CHIP

• Main Author: PFEUFFER ALEXANDER F
• Format: Patent
• Language: English; Korean
• Published: 26.08.2015
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

What is specified is a method for producing a plurality of optoelectronic semiconductor chips (1) each having a plurality of pixels (25). A semiconductor layer sequence (2) having an active region (20) provided for generating and/or detecting radiation, said active region being formed between a first semiconductor layer (21) a second semiconductor layer (22), is provided. The semiconductor layer sequence is fixed to a carrier (5) with a plurality of first connection areas (51), such that the first semiconductor layer is electrically conductively connected to the first connection areas. Isolating trenches (27) are formed in the semiconductor layer sequence fixed to the carrier, in order to form the pixels, wherein the isolating trenches extend through the semiconductor layer sequence. A contact layer (6) is formed, which electrically conductively connects the second semiconductor layer to a second connection area (52) of the carrier. The carrier is singulated into the plurality of semiconductor chips each having a plurality of pixels. Furthermore, an optoelectronic semiconductor chip (1) is specified.