TRANSISTOR STRAIN-INDUCING SCHEME

A transistor device comprises a gate structure arranged on a channel area of a semiconductor substrate. A source/drain recess is arranged next to the gate structure on the semiconductor substrate. A doped silicon-germanium (SiGe) area is arranged in the source/drain recess, and has a doping form opp...

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Bibliographic Details
Main Authors SUNG HSUEH CHANG, LI KUN MU, LI CHII HORNG, LEE TZE LIANG, KWOK TSZ MEI
Format Patent
LanguageEnglish
Korean
Published 24.08.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A transistor device comprises a gate structure arranged on a channel area of a semiconductor substrate. A source/drain recess is arranged next to the gate structure on the semiconductor substrate. A doped silicon-germanium (SiGe) area is arranged in the source/drain recess, and has a doping form opposite to a doping form of the channel. A non-doped SiGe area is also arranged in the source/drain recess. The non-doped SiGe area is under the doped SiGe area, and has different germanium concentrations on different locations in the source/drain recess.
Bibliography:Application Number: KR20140139116