INSULATED GATE FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF MAKING THE SAME

• Main Authors: LOSEE PETER ALMERN, RAO RAMAKRISHNA, MATOCHA KEVIN SEAN, BOLOTNIKOV ALEXANDER VIKTOROVICH, ARTHUR STEPHEN DALEY
• Format: Patent
• Language: English; Korean
• Published: 19.08.2015
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

An insulating gate field effect transistor (IGFET) device includes a semiconductor body and a gate oxide. The semiconductor body includes a first well region doped with a first type of dopant and a second well region that is doped with an oppositely charged second type of dopant and is located withi...