INSULATED GATE FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF MAKING THE SAME

An insulating gate field effect transistor (IGFET) device includes a semiconductor body and a gate oxide. The semiconductor body includes a first well region doped with a first type of dopant and a second well region that is doped with an oppositely charged second type of dopant and is located withi...

Full description

Saved in:
Bibliographic Details
Main Authors LOSEE PETER ALMERN, RAO RAMAKRISHNA, MATOCHA KEVIN SEAN, BOLOTNIKOV ALEXANDER VIKTOROVICH, ARTHUR STEPHEN DALEY
Format Patent
LanguageEnglish
Korean
Published 19.08.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:An insulating gate field effect transistor (IGFET) device includes a semiconductor body and a gate oxide. The semiconductor body includes a first well region doped with a first type of dopant and a second well region that is doped with an oppositely charged second type of dopant and is located within the first well region. The gate oxide includes an outer section and an interior section having different thickness dimensions. The outer section is disposed over the first well region and the second well region of the semiconductor body. The interior section is disposed over a junction gate field effect transistor region of the semiconductor body. The semiconductor body is configured to form a conductive channel through the second well region and the junction gate field effect transistor region when a gate signal is applied to a gate contact disposed on the gate oxide.
Bibliography:Application Number: KR20157018075