INTEGRATED CIRCUIT STRUCTURE AND METHOD FOR MANUFACTURING THEREOF

Provided is an integrated circuit structure including a substrate, a low voltage device, and a high voltage device. The low voltage device has a first linear distance from a first epitaxial structure to an adjacent gate stack, and the high voltage device has a second linear distance from a second ep...

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Bibliographic Details
Main Authors CHIANG TSUNG YU, CHEN KUANG HSIN
Format Patent
LanguageEnglish
Korean
Published 17.08.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Provided is an integrated circuit structure including a substrate, a low voltage device, and a high voltage device. The low voltage device has a first linear distance from a first epitaxial structure to an adjacent gate stack, and the high voltage device has a second linear distance from a second epitaxial structure to an adjacent gate stack. The second linear distance of the high voltage device is longer than the first linear distance of the low voltage device, thereby having leakage current in the high voltage device reduced under high voltage operation. Also, provided in the present invention is a method for manufacturing the integrated circuit structure.
Bibliography:Application Number: KR20140157166